BLF888,112

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BLF888,112 datasheet

Маркировка

BLF888,112
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BLF888,112 Application: UHF Channel Mode: Enhancement Channel Type: N Current - Test: 1.3A Current Rating: - Drain Efficiency (typ): 46% Drain Source Resistance (max): 105(Typ)@6.15Vmohm Drain Source Voltage (max): 104V Forward Transconductance (typ): 17S Frequency: 860MHz Frequency (max): 860MHz Frequency (min): 470MHz Gain: 19dB ID_COMPONENTS: 3738388 Input Capacitance (typ)@vds: 205@50VpF Lead Free Status / Rohs Status: Compliant Mode Of Operation: 2-Tone Class-AB/DVB-T Mounting: Screw Noise Figure: - Number Of Elements: 2 Operating Temp Range: -65C to 200C Output Capacitance (typ)@vds: 65@50VpF Output Power (max): 250W(Min) Package / Case: SOT979A Package Type: LDMOST Pin Count: 5 Power - Output: 250W Power Gain (typ)@vds: 19@50VdB Reverse Capacitance (typ): 2.2@50VpF Screening Level: Military Series: - Transistor Type: LDMOS Voltage - Rated: 104V Voltage - Test: 50V Vswr (max): 10 RoHS: yes Configuration: Dual Transistor Polarity: N-Channel Output Power: 250 W Drain-Source Breakdown Voltage: 104 V Continuous Drain Current: 43 A Gate-Source Breakdown Voltage: 11 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Factory Pack Quantity: 20 Other Names: 568-5102-5, 934062101112, BLF888,112
Количество страниц

17 шт.
Форматы файла

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